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Spin Transfer Torque based Magneto-resistive Memories"Brajesh Kumar Kaushik Microelectronics and VLSI Group, Department of Electronics and Communication Engineering, I. I. T, Roorkee, Uttarakhand"

Researchers believe spintronics to be one of the most promising technologies to replace the conventional CMOS technology that suffers from severe static leakage beyond 22nm technology node. Spintronics is an emerging technology that exploits an electron's spin orientation and its associated magnetic moment as state variable. It involves the storage of information in terms of non-volatile magnetization state instead of the charge. Thus, the new goal is to develop computing architecture that can normally be off when not in use to prevent static leakage. Moreover, such architecture can be turned on instantly with full performance when required. The primary requisite to achieve non-volatile architecture is non-volatile RAM (NVRAM). Most promising technology to achieve non-volatile RAMs is the emerging spintronics based magneto-resistive memories that switches by spin transfer torque (STT).Spintronics based magneto-resistive memories were revolutionized by the phenomenon of spin transfer torque (STT) effect, first demonstrated by J.C Slonczewski in 1996. After this monumental discovery, spintronics based magneto-resistive memories have evolved considerably in the last decade into their novel form known as spin transfer torque magneto-resistive random access memories (STT MRAMs). STT MRAMs store data as the resistance state of a magneto-resistive device known as magnetic tunnel junctions (MTJs). An STT MRAM cell is composed of two primary components: the "Magnetic tunnel junction," which is usually characterized by magneto-resistance and switching current density, and the "Access device," which allows a given memory cell to be addressed for read or write. This talk will target for a clear understanding of STT MRAMs in terms of architecture, operation and performance comparison with other volatile and non-volatile memory technologies. Moreover, the talk will also focus towards the recent developments and challenges ahead for STT MRAMs.